Invited Speaker – Professor, Ravikiran Lingaparthi

Institution:

Nanyang Technological University (NTU), Singapore

Current Positions:

Senior Research Scientist

Biographical details

Experienced Researcher with a demonstrated history of working in the research and industry. I have more than 15 year experience in wide bandgap semiconductors. My skill set are listed below.

Semiconductor Epitaxy and Semiconductor device Expertise:
1. Epitaxial growth Expertise: I possess strong expertise and experience in growing wide bandgap semiconductor materials such as GaN-based materials and Ga2O3 using MOCVD, MBE, and HVPE. I have designed the heterostructures to meet the requirements of HEMTs as well as optoelectronics devices such as NIR photodetectors. Strain-engineering and buffer engineering techniques were mastered to achieve high-quality epitaxial layers and heterostructures for various device applications.
2. Heterostructure design and epitaxial growth for various applications:
• MOCVD and MBE growth of GaN HEMT heterostructures on Si (111) and SiC substrates for high frequency and high power applications
• Design and MOCVD growth of multi-channel GaN-based HEMTs for high-power and high-frequency electronic applications
• HVPE growth of Ga2O3 homo-epitaxial layers for high-power electronic applications
• Design and MBE growth of multi-quantum well heterostructures for NIR GaN photodetectors and metamaterials
3. More technical strengths:
• Device fabrication: Optical Lithography, Etching, CVD, E-beam and thermal evaporation techniques
• Material characterization techniques: HR-XRD, AFM, Raman, PL, in-situ strain, C-V, Hall, and device analysis with parametric analyzer
• Device simulation software: 1-D Poisson-Schrodinger, DDCC 1D, and Atlas device simulator
• Analysis software: Matlab, Scilab, and Origin
4. Leadership and management:
• I have been managing a group of people, planning and executing DOEs to meet the target deliverables and achieving project success